锐骏半导体推出一款SOT23-3封装的N沟道增强型功率MOSFET——RU207C，采用超高密度单元设计，漏源电压大额定值为20V，连续漏极电流大额定值为6A（T_A=25℃），具有低导通电阻特性，可靠、坚固，可用于电源管理应用。

产品特点

20V/6A

R_DS(ON)=10mΩ（典型值）@V_GS=4.5V

R_DS(ON)=15mΩ（典型值）@V_GS=2.5V

低导通电阻

超高密度单元设计

可靠、坚固

无铅、绿色环保器件，满足RoHS标准

应用

电源管理

更多型号：

RU16P4M4、RU16P8M4、RU20P7C、RU20P7C6、RU20P17M2、RU20P4C、RU20P3B、RU20P4C6、RU20P18L、RU30P4C、RU30P4B、RU30P3B、RU30P4C6、RU30S4H、RU30S5H、RU30S15H、RU30P4H、RU30P5H、RU30P5D、RU30L15H、RU30L18H、RU30L30M、RU30L40M2、RU30L70L、RU30C8H、RU30C10H、RU30C30M、RU40C40M、RU40P3C、RU40S4H、RU40P4H、RU40L10H、RU40L10L、RU55L18L、RU55L18R、RU60P50L、RU60P50S、RU60C8H、RU1HL8L、RU1HL13R、RU1HL13L、RU1HL13K、RU1HP35L、RU1HP60S、RU1HP60R、RU1HP60Q、RU207C、RU2030M2、RU20D40M3、RU205B、RU8205C6、RU8205G、RU2020H、RU2520H、RU2560L、RU2568L、RU304B、RU30E4B、RU306C、RU30D8H、RU3010H、RU30D10H、RU3011H、RU3020H、RU3012M4、RU30D20M2、RU30D20H、RU3030M2、RU30J30M、RU3040M2、RU3041M2、RU30J41M、RU30J51M、RU3060L、RU3060K、RU30E60M2、RU3568L、RU30E40L、RU30E20H、RU3065L、RU3568R、RU3070M、RU3070M2、RU3070L、RU3075L、RU3075R、RU3080M、RU3089L、RU3089M、RU3080L、RU3090M、RU3091M、RU30120L、RU30120R、RU30120M、RU30120S、RU30160R、RU30200M、RU30230R、RU30231R、RU30290R、RU30291R、RU30300R、RU3520H、RU40E25L、RU40E32L、RU3560L、RU4068L、RU40E80L、RU4089R、RU4089L

深圳市芯美力科技有限公司，锐骏半导体，原厂代理

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